- Face down deposition in closed chamber by chucking wafer on heater above dispersion head realized good thermal uniformity to make good film thickness Nu, and less particle additions.
- Backside Gas from the backside wafer prevent backside deposition and prevent extra SiO deposition on the wall of parts of chambers.
- Minimized system footprint.
- Low temp. process is available with O3 （150℃～350℃）
A200V
•Thickness Nu WiW ±2％
•Less Particle Design
•Good Step Coverage
•Small Footprint
•Lower Temp. Oxide
•Good Maintenability
•Safety
